Total Device Dissipation PD TA = 25☌ 1.25 Watts Derate above 25☌ 10 mW/☌ 1 2 3 Total Device Dissipation PD TC = 25☌ 12.5 Wattsĭerate above 25☌ 100 mW/☌ Operating and Storage Junction TJ, Tstg – 55 to + 150 ☌ Temperature Range YWW Stresses exceeding those listed in the Maximum Ratings table may damage the BD1xxG device.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSĬollector−Emitter Voltage VCEO Vdc 3 BD136G 45 BASE BD138G 60 BD140G 80 1 Collector−Base Voltage VCBO Vdc EMITTER BD136G 45 BD138G 60 BD140G 100 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc.BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
